Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization

verfasst von

Jörg Kludt, J. Ciptokusumo, K. Weide-Zaage

Abstract

An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.

Organisationseinheit(en)

Laboratorium f. Informationstechnologie

Typ

Aufsatz in Konferenzband

Publikationsdatum

2012

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik, Modellierung und Simulation

Elektronische Version(en)

https://doi.org/10.1109/ESimE.2012.6191701 (Zugang: Unbekannt)