Determination of migration effects in Cu-via structures with respect to process-induced stress
- verfasst von
- Kirsten Weide-Zaage, Jiani Zhao, Joharsyah Ciptokusumo, Oliver Aubel
- Abstract
State-of-the-art migration calculations and mechanical simulations of interconnect structures are carried out under the assumption of one specific stress-free temperature for the structure. Finite element simulations of mechanical stress induced by the specific process temperatures of every process step are reported. But the connection between migration effects and process-induced stress was not investigated until now. In this paper, stress migration as well as electro- and thermomigration considering the process flow of the copper metallization will be determined and compared with simulations under fixed reference temperatures.
- Organisationseinheit(en)
-
Laboratorium f. Informationstechnologie
- Externe Organisation(en)
-
AMD Saxony Limited Liability Company and Co. KG
- Typ
- Artikel
- Journal
- Microelectronics reliability
- Band
- 48
- Seiten
- 1393-1397
- Anzahl der Seiten
- 5
- ISSN
- 0026-2714
- Publikationsdatum
- 08.2008
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Physik der kondensierten Materie, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik
- Elektronische Version(en)
-
https://doi.org/10.1016/j.microrel.2008.06.028 (Zugang:
Unbekannt)
