A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies
- authored by
- Niklas Deneke, Bernhard Wicht
- Abstract
Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
- Organisation(s)
-
Mixed-Signal Circuits Section
Laboratory of Nano and Quantum Engineering
- Type
- Article
- Journal
- IEEE Solid-State Circuits Letters
- Volume
- 7
- Pages
- 207-210
- No. of pages
- 4
- ISSN
- 2573-9603
- Publication date
- 07.06.2024
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Electronic version(s)
-
https://doi.org/10.1109/lssc.2024.3411390 (Access:
Closed)
