Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization

authored by

Jörg Kludt, J. Ciptokusumo, K. Weide-Zaage

Abstract

An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.

Organisation(s)

Laboratorium f. Informationstechnologie

Type

Conference contribution

Publication date

2012

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering, Modelling and Simulation

Electronic version(s)

https://doi.org/10.1109/ESimE.2012.6191701 (Access: Unknown)