Determination of migration effects in Cu-via structures with respect to process-induced stress

authored by

Kirsten Weide-Zaage, Jiani Zhao, Joharsyah Ciptokusumo, Oliver Aubel

Abstract

State-of-the-art migration calculations and mechanical simulations of interconnect structures are carried out under the assumption of one specific stress-free temperature for the structure. Finite element simulations of mechanical stress induced by the specific process temperatures of every process step are reported. But the connection between migration effects and process-induced stress was not investigated until now. In this paper, stress migration as well as electro- and thermomigration considering the process flow of the copper metallization will be determined and compared with simulations under fixed reference temperatures.

Organisation(s)

Laboratorium f. Informationstechnologie

External Organisation(s)

AMD Saxony Limited Liability Company and Co. KG

Type

Article

Journal

Microelectronics reliability

Volume

48

Pages

1393-1397

No. of pages

5

ISSN

0026-2714

Publication date

08.2008

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Surfaces, Coatings and Films, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1016/j.microrel.2008.06.028 (Access: Unknown)