Simulation of the influence of TiAl 3 layers on the thermal-electrical and mechanical behaviour of Al metallizations
- authored by
- J. Kludt, K. Weide-Zaage, M. Ackermann, V. Hein
- Abstract
Al/Ti/TiN metallizations form TiAl 3 layers during the annealing process. The influence of TiAl 3 layers on the thermal-electrical- mechanical behaviour is investigated here. For high temperature automotive and industrial applications in a 0.35 μm CMOS process the test structures have to be approved. The thermal-electrical-mechanical behaviour of the test structures is calculated by simulations. Two aluminium deposition temperatures of 250 °C and 470 °C were considered. The Ti-based layer thicknesses forming the TiAl 3 as well as the whole metallization thickness were investigated. The simulations show a good correlation with measurements.
- Organisation(s)
-
Laboratorium f. Informationstechnologie
- External Organisation(s)
-
X-FAB Silicon Foundries SE
- Type
- Article
- Journal
- Microelectronics reliability
- Volume
- 52
- Pages
- 1987-1992
- No. of pages
- 6
- ISSN
- 0026-2714
- Publication date
- 09.2012
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Surfaces, Coatings and Films, Electrical and Electronic Engineering
- Electronic version(s)
-
https://doi.org/10.1016/j.microrel.2012.06.129 (Access:
Unknown)
