A Resonant One-Step 325 v to 3.3-10 v DC-DC Converter with Integrated Power Stage Benefiting from High-Voltage Loss-Reduction Techniques

authored by

Christoph Rindfleisch, Bernhard Wicht

Abstract

This work presents a self-timed resonant high-voltage (HV) dc-dc converter in HV CMOS silicon-on-insulator (SOI) with a one-step conversion from 100-325 V input down to a 3.3-10 V output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the HV converter is fully integrated, including an on-chip power stage, with only one external inductor (10 $\mu \text{H}$ ) and capacitor (470 nF). It reaches a high power density of 752 mW/cm3, an overall peak efficiency as high as 81%, and a light-load efficiency of 73.2% at 5 V and 50 mW output. HV loss-reduction techniques are presented and experimentally confirmed to offer an efficiency improvement of more than 32%. Integrated HV insulated gate bipolar transistors (IGBTs) are discussed and implemented as an attractive alternative to conventional integrated HV power switches, resulting in 20% smaller area at lower losses.

Organisation(s)

Institute of Microelectronic Systems
Mixed-Signal Circuits Section

Type

Article

Journal

IEEE Journal of Solid-State Circuits

Volume

56

Pages

3511-3520

No. of pages

10

ISSN

0018-9200

Publication date

01.11.2021

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1109/JSSC.2021.3098751 (Access: Open)