Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps

authored by
L. Meinshausen, K. Weide-Zaage, H. Frémont
Abstract

Microbumps consisting of intermetallic compounds like Cu6Sn 5 or Cu3Sn have a longer lifetime during electromigration tests than SnAgCu microbumps. To explain the difference in behavior of Cu-Sn IMCs and SnAgCu during stress test the migration induced mass flux was calculated for Cu3Sn and Cu6Sn5. The results were compared to the mass flux in SnAgCu 305. Furthermore average effective charge values for Cu3Sn and Cu6Sn5 were approximated by comparing the separated movement of Cu and Sn with three different models for an averaged mass flux in the IMCs.

Organisation(s)
Laboratorium f. Informationstechnologie
External Organisation(s)
Universite de Bordeaux
Type
Article
Journal
Microelectronics reliability
Volume
51
Pages
1860-1864
No. of pages
5
ISSN
0026-2714
Publication date
09.2011
Publication status
Published
Peer reviewed
Yes
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Surfaces, Coatings and Films, Electrical and Electronic Engineering
Electronic version(s)
https://doi.org/10.1016/j.microrel.2011.06.032 (Access: Unknown)