Simulation of migration effects in nanoscaled copper metallizations

authored by

Kirsten Weide-Zaage, Farzan Kashanchi, Oliver Aubel

Abstract

The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.

Organisation(s)

Laboratorium f. Informationstechnologie

External Organisation(s)

AMD Saxony Limited Liability Company and Co. KG

Type

Article

Journal

Microelectronics reliability

Volume

48

Pages

1398-1402

No. of pages

5

ISSN

0026-2714

Publication date

08.2008

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Surfaces, Coatings and Films, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1016/j.microrel.2008.06.025 (Access: Unknown)