Dynamic void formation in a DD-copper-structure with different metallization geometry

authored by

Kirsten Weide-Zaage, David Dalleau, Yves Danto, Helene Fremont

Abstract

In this study the degradation phenomena in dual-damascene copper (DD-Cu) metallizations will be investigated due to high current densities and substrate temperatures by finite element modeling. The static and dynamic simulations and calculations will show the suitability of the method in comparison to experimental results from the literature. Different geometry variations, like overlap and via height as well as a variation of the stress free temperature of the metallization will be carried out. It will be found, that if the maximum temperature in the metallization is near the stress free temperature the electromigration is dominant. If the temperatures differ from the stress free level stress migration will be predominant. Out of this it will be found that the knowledge of the stress free temperature in the metallization is very important for a sufficient migration determination.

Organisation(s)

Laboratorium f. Informationstechnologie

External Organisation(s)

Universite de Bordeaux

Type

Article

Journal

Microelectronics reliability

Volume

47

Pages

319-325

No. of pages

7

ISSN

0026-2714

Publication date

02.2007

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality, Condensed Matter Physics, Surfaces, Coatings and Films, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1016/j.microrel.2006.09.012 (Access: Unknown)