Analysis and modeling of minority carrier injection in deep-trench based BCD technologies

authored by

Michael Kollmitzer, Markus Olbrich, Erich Barke

Abstract

This paper proposes a methodology for circuit simulation of parasitic effects caused by minority carrier injection into the substrate of a deep-trench based BCD technology. An equivalent circuit is used containing pre-calculated macro models for the injecting diode, the substrate of the chip and the sensitive diode. The macro models are generated by means of TCAD simulations which determine the carrier density distribution in the substrate. The carrier density in the substrate at the sensitive pn-junction is directly related to the parasitic current of the device. The results of the simulations are verified by test chip measurements.

Organisation(s)

Mixed-Signal Circuits Section

External Organisation(s)

Infineon Technologies AG

Type

Conference contribution

Pages

245-248

No. of pages

4

Publication date

2013

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1109/PRIME.2013.6603160 (Access: Unknown)