TID and DSEE Effects in a Hi-Rel Point-of-Load IC Prototype for Space Applications

authored by: Philipp Mand, Volodymyr Burkhay, Andre Rocke, Uwe Gieselmann, Leon Fauth, Markus Olbrich, Christophe Delepaut, Bernhard Wicht, Jens Friebe
Abstract: High-performance applications that require a high output current and a faster transient response increase the need to place the power supply as close as possible to the load. A Point-of-Load converter is specifically designed to meet this requirement. In space, additional reliability criteria such as extended temperature ranges and radiation tolerance are important. In this paper the Total Ionizing Dose and Destructive Single Event Effects on a prototype rad-hard Point-of-Load converter for space applications are evaluated. The device is a fully integrated DC-DC converter IC with two switches and the control on one die. The device is capable of 40 V input and 8 A continuous output current. The partially ESA-certified ATMEL ATMX150RHA silicon-on-insulator technology was used to make the IC immune to latch-ups. In addition, 'hardness-by-design' techniques were used. The radiation effects are analyzed and possible improvements in the design are given. Since not all transistors of the ATMX150RHA technology were previously tested against radiation, this paper gives more information on the radiation response of this technology.
Organisation(s): Institute of Drive Systems and Power Electronics
Institute of Microelectronic Systems
External Organisation(s): European Space Research and Technology Centre (ESTEC)
Space Ic GmbH
University of Kassel
Type: Conference contribution
Publication date: 2023
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Energy Engineering and Power Technology, Electrical and Electronic Engineering, Aerospace Engineering
Electronic version(s): https://doi.org/10.1109/espc59009.2023.10413247 (Access: Closed)